MOVPE OF GAN USING A SPECIALLY DESIGNED 2-FLOW HORIZONTAL REACTOR

GaN epilayers have been grown on (0001) sapphire substrates with a spe cially designed two-flow horizontal metalorganic vapor phase epitaxy ( MOVPE) reactor. Epilayers with flat and smooth surfaces were obtained at the growth temperature of 950 degrees C with relatively low source supply rates, This indicates a relatively high growth efficiency of th e reactor, Characterization by photoluminescence, X-ray diffraction an d Hall measurements reveal that the epilayers are of reasonably high q uality.