LOW-PRESSURE MOVPE OF GAN AND GAINN GAN HETEROSTRUCTURES/

GaN single layers and GaInN/GaN heterostructures have been grown by lo w pressure metalorganic vapor phase epitaxy on sapphire substrates. We found best growth conditions and the highest growth rate for GaN to b e at about 1000 degrees C, whereas the growth rate decreased for both, higher and lower temperatures. In contrast, GaInN with a significantl y high In content could only be grown at lower temperatures around 700 degrees C. Besides growth temperature and reactor pressure, the compo sition of the carrier gas was found to play an important role: the In incorporation rate is about doubled when reducing the hydrogen/nitroge n ratio. GaInN/GaN quantum wells show even higher In contents compared to bulk layers.