MICROAMPERE LASER THRESHOLD AT 80-DEGREES-C WITH INGAAS GAAS/INGAP BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS/

Authors
NAKAMURA K OSHIBA S NAKAJIMA M GOTOH S HORIKAWA H
Citation
K. Nakamura et al., MICROAMPERE LASER THRESHOLD AT 80-DEGREES-C WITH INGAAS GAAS/INGAP BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS/, Journal of crystal growth, 170(1-4), 1997, pp. 377-382
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
377 - 382
Database
ISI
SICI code
0022-0248(1997)170:1-4<377:MLTA8W>2.0.ZU;2-9
Abstract
An extremely low CW threshold current of 670 mu A and a high slope eff iciency of 0.14 W/A at a high junction temperature of 80 degrees C wer e obtained with a 200 mu m long Al-free InGaAs/GaAs/InGaP buried heter ostructure (BH) quantum well laser grown by three-step metal organic v apor phase epitaxy (MOVPE). The maximum energy conversion efficiency o f a 500 mu m long laser was as high as 50% at a output power level of 1 mW. Regrowth conditions of InGaP layers were found to be crucial for planarizing the grown surface to realize the high performances.