MOVPE-GROWN HIGH CW POWER INGAAS INGAASP/INGAP DIODE-LASERS/

Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yiel ded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 mu m wide stripes and 1 mm long cavity lengths. Devices with a 0.5 mm cavit y length exhibit total power conversion efficiencies as high as 59%. A novel facet passivation technique, consisting of laser-assisted depos ition of ZnSe, is shown to increase the COD level by 50%. Single-mode, CW output powers of 400 mW are obtained from triple-core ARROW lasers fabricated by a two-step MOVPE growth process.