Vertical cavity surface emitting lasers (VCSELs) based on InGaP lase i
n the visible close to 650 nm. The polarisation characteristics of the
se devices are unlike other VCSELs in that they are stable and reprodu
cible and show no switching with increased current. We describe the po
larisation characteristics for such devices where the structures were
grown on different orientation wafers. We show that polarisation selec
tivity increases directly with the degree of spontaneous ordering in t
he InGaP quantum wells, but not with the wafer offset angle.