POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS

Citation
Yh. Chen et al., POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS, Journal of crystal growth, 170(1-4), 1997, pp. 394-398
Citations number
17
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
394 - 398
Database
ISI
SICI code
0022-0248(1997)170:1-4<394:PCOVV>2.0.ZU;2-4
Abstract
Vertical cavity surface emitting lasers (VCSELs) based on InGaP lase i n the visible close to 650 nm. The polarisation characteristics of the se devices are unlike other VCSELs in that they are stable and reprodu cible and show no switching with increased current. We describe the po larisation characteristics for such devices where the structures were grown on different orientation wafers. We show that polarisation selec tivity increases directly with the degree of spontaneous ordering in t he InGaP quantum wells, but not with the wafer offset angle.