A. Clark et al., DESIGN AND OPTIMIZATION OF ALXGA1-XAS ALYGA1-YAS MULTILAYER STRUCTURES FOR VISIBLE WAVELENGTH APPLICATIONS/, Journal of crystal growth, 170(1-4), 1997, pp. 424-427
Quantum wells with excitonic features in the visible wavelength range
were designed using the AlxGa1-xAs/AlyGa1-yAs material system, and gro
wn using low pressure metal organic vapour phase epitaxy. Characterisa
tion of these quantum well samples was carried out by using photovolta
ic spectroscopy, photoluminescence, differential reflectance or photor
eflectance techniques. These measurements showed that excitonic absorp
tion in the 520-630 nm range could be achieved using these AlGaAs quan
tum wells.