DESIGN AND OPTIMIZATION OF ALXGA1-XAS ALYGA1-YAS MULTILAYER STRUCTURES FOR VISIBLE WAVELENGTH APPLICATIONS/

Citation
A. Clark et al., DESIGN AND OPTIMIZATION OF ALXGA1-XAS ALYGA1-YAS MULTILAYER STRUCTURES FOR VISIBLE WAVELENGTH APPLICATIONS/, Journal of crystal growth, 170(1-4), 1997, pp. 424-427
Citations number
4
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
424 - 427
Database
ISI
SICI code
0022-0248(1997)170:1-4<424:DAOOAA>2.0.ZU;2-L
Abstract
Quantum wells with excitonic features in the visible wavelength range were designed using the AlxGa1-xAs/AlyGa1-yAs material system, and gro wn using low pressure metal organic vapour phase epitaxy. Characterisa tion of these quantum well samples was carried out by using photovolta ic spectroscopy, photoluminescence, differential reflectance or photor eflectance techniques. These measurements showed that excitonic absorp tion in the 520-630 nm range could be achieved using these AlGaAs quan tum wells.