GROWTH OF HIGH-QUALITY ZNSE ON CLOSELY LATTICE-MATCHED INGAAS SUBSTRATES BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Epitaxial ZnSe layers have been grown by metal organic chemical vapor deposition (MOCVD) on GaAs and InGaAs substrates over the temperature range 400-500 degrees C, using either diisopropyl selenide or diethyl selenide with diethyl zinc. The latter combination leads to improved o ptical and crystal quality at a growth temperature of 500 degrees C. T he narrowest double crystal rocking curve width is 100 arcsec in the l attice-matched case with a 3.5% InAs content in the InGaAs substrate, comparable to films grown by molecular beam epitaxy (MBE). Both n- and p-type dopants have been incorporated to fabricate p/n homojunction s tructures.