DEEP HOLE TRAP LEVEL OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

We investigated the hole trap level of nitrogen-doped ZnSe grown by a metalorganic vapor phase epitaxy method. The deep level transient spec troscopy (DLTS) signal and the C-V profile were measured to obtain the trap level, the capture cross section and the trap concentration. A d eep hole trap level of about 1 eV from a valence band (labeled TL1S) w as extracted from the tail of the DLTS peak. The distributions of the capture cross section and the trap level of the samples for different growth conditions were drawn in a figure to investigate the validity o f the resolution of the DLTS signal. The origin of TL1S is thought to be in relation to the ionized acceptor or the charged acceptor-like lo calized defects.