GROWTH AND DOPING CHARACTERISTICS OF ZNSETE EPILAYERS BY MOCVD

Compositional control, band gap evaluation and acceptor doping charact erization for ZnSeTe have been studied. Zinc selenotelluride layers we re grown on GaAs (100) substrates by atmospheric metalorganic chemical vapor deposition. The composition of the ZnSexTe(1 - x) solid is prop ortional to the gas phase composition when the VI/II ratio is close to unity. Accurate band gap energy values for ZnSeTe epilayers were obta ined at room temperature by photoreflectance spectroscopy. The bowing parameter is 1.647 eV. The p-type carrier concentration of ZnSeTe:As i s drastically quenched with increasing Se incorporation. The quenching is possibly attributable to the lattice distortion.