Al. Gurskii et al., OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR, Journal of crystal growth, 170(1-4), 1997, pp. 533-536
Photoluminescence (PL), C-V and I-V characteristics of MOVPE-grown ZnS
e:N doped using triallylamine (TAN) have been investigated. In our exp
eriments, the use of TAN as dopant source does not lead to the incorpo
ration of nitrogen into the lattice at the VI/II ratio optimized for t
he growth of undoped ZnSe. At smaller VI/II ratios a high concentratio
n of donor states (10(17)-10(18) cm(-3)) appears leading to the format
ion of a broad PL band at 2.791-2.792 eV caused by a transition from t
he states formed by an overlap of the conduction band and donor states
to the valence band. The acceptor states with an activation energy of
80 meV are most likely formed by oxygen contamination of TAN.