OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR

Photoluminescence (PL), C-V and I-V characteristics of MOVPE-grown ZnS e:N doped using triallylamine (TAN) have been investigated. In our exp eriments, the use of TAN as dopant source does not lead to the incorpo ration of nitrogen into the lattice at the VI/II ratio optimized for t he growth of undoped ZnSe. At smaller VI/II ratios a high concentratio n of donor states (10(17)-10(18) cm(-3)) appears leading to the format ion of a broad PL band at 2.791-2.792 eV caused by a transition from t he states formed by an overlap of the conduction band and donor states to the valence band. The acceptor states with an activation energy of 80 meV are most likely formed by oxygen contamination of TAN.