OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR

Citation
Al. Gurskii et al., OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR, Journal of crystal growth, 170(1-4), 1997, pp. 533-536
Citations number
11
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
533 - 536
Database
ISI
SICI code
0022-0248(1997)170:1-4<533:OAEOMZ>2.0.ZU;2-4
Abstract
Photoluminescence (PL), C-V and I-V characteristics of MOVPE-grown ZnS e:N doped using triallylamine (TAN) have been investigated. In our exp eriments, the use of TAN as dopant source does not lead to the incorpo ration of nitrogen into the lattice at the VI/II ratio optimized for t he growth of undoped ZnSe. At smaller VI/II ratios a high concentratio n of donor states (10(17)-10(18) cm(-3)) appears leading to the format ion of a broad PL band at 2.791-2.792 eV caused by a transition from t he states formed by an overlap of the conduction band and donor states to the valence band. The acceptor states with an activation energy of 80 meV are most likely formed by oxygen contamination of TAN.