A HIGHLY LUMINESCENT CRESCENT-SHAPED TENSILE-STRAINED GAASP ALGAAS QUANTUM-WIRE LASER STRUCTURE/

Authors
PAN WG YAGUCHI H HANAMAKI Y ISHIKAWA M KANEKO Y ONABE K ITO R SHIRAKI Y
Citation
Wg. Pan et al., A HIGHLY LUMINESCENT CRESCENT-SHAPED TENSILE-STRAINED GAASP ALGAAS QUANTUM-WIRE LASER STRUCTURE/, Journal of crystal growth, 170(1-4), 1997, pp. 585-589
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
585 - 589
Database
ISI
SICI code
0022-0248(1997)170:1-4<585:AHLCTG>2.0.ZU;2-M
Abstract
We report a highly luminescent crescent-shaped tensile-strained GaAsP/ AlGaAs quantum wire (QWR) laser structure on 3 mu m periodic V-grooves grown by low-pressure (100 Torr) metalorganic vapor phase epitaxy (MO VPE). Photoluminescence studies show that carriers are efficiently cap tured from neighboring quantum well layers (QWLs) into QWRs, which giv e efficient luminescence. The QWR light emitting diode (LED) shows pol arization insensitivity resulting from the tensile strain properties o f the QWR structure.