EFFECT OF INCORPORATION EFFICIENCY ON DOPANT BEHAVIORS IN SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY

We investigated the behavior of Zn and Si dopants in InP selective-are a metalorganic vapor phase epitaxy using dimethylzinc, silane and disi lane. The high incorporation efficiency in disilane doping induced lat eral vapor phase diffusion of the dopant species from the mask region to the unmasked region, whereas the low incorporation efficiency in di methylzinc and silane dopings induced no vapor phase diffusion. This l ack of lateral diffusion for silane doping reduced the Si dopant conce ntration in the region where the growth rate was enhanced by the mask- patterning. The lateral diffusion in disilane doping and the independe nce of the Zn dopant concentration on the growth rate resulted in a un iform in-plane dopant concentration in the epilayers.