SELECTIVE-AREA MOCVD GROWTH FOR 1.3-MU-M LASER-DIODES WITH A MONOLITHICALLY INTEGRATED WAVE-GUIDE LENS

A tapered thickness profile and a high thickness enhancement ratio of 3.5 in the waveguide which are necessary for a narrow beam have been r ealized by selective-area metalorganic chemical vapor deposition (MOCV D) growth using a tapered shape twin mask. A multiple quantum well (MQ W) active layer with high strain of 0.9% which is effective for a low threshold current has also been successfully grown by the control of t he compositional modulation of InGaAsP in the selective-area growth. U sing these techniques, a narrow beam and a low threshold current have been realized for a 1.3 mu m laser diode monolithically integrated wit h a tapered thickness waveguide lens.