GROWTH AND CHARACTERIZATION OF SB-BASED HETEROSTRUCTURES GROWN BY LP-MOVPE

GaSb/AlSb, InAs/AlSb and InAs/InP0.69Sb0.31 multi-quantum well structu res were grown successfully by metalorganic vapor phase epitaxy. The g ood structural and optical quality was characterized by a combination of Raman spectroscopy and X-ray diffractometry. For the GaSb/AlSb stru ctures an unintentional incorporation of some percent Alin the GaSb we ll and of Ga in AlSb barrier layers was identified. At the interfaces of the material systems InAs/AlSb and InAs/InP0.69Sb0.31 our studies r evealed the existence of InAsSb layers, which are explained in terms o f the surfactant effect of Sb. The thickness and composition of these interlayers depend strongly on the InAs growth rate.