CHARACTERIZATION OF FUNCTIONAL-RELATIONSHIP BETWEEN TEMPERATURE AND MICROELECTRONIC RELIABILITY

Citation
P. Lall et al., CHARACTERIZATION OF FUNCTIONAL-RELATIONSHIP BETWEEN TEMPERATURE AND MICROELECTRONIC RELIABILITY, Microelectronics and reliability, 35(3), 1995, pp. 377-402
Citations number
82
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
35
Issue
3
Year of publication
1995
Pages
377 - 402
Database
ISI
SICI code
0026-2714(1995)35:3<377:COFBTA>2.0.ZU;2-U
Abstract
The functional relationship between temperature and microelectronic re liability is presently characterized by an Arrhenius relationship. The Arrhenius relationship encourages lowering temperature to achieve rel iability goals. In this paper, the role of temperature in achieving co st-effective reliable electronic equipment has been investigated. The effect of temperature on reliability has been evaluated based on failu re mechanisms and electrical parameter variations. The device investig ated in this paper is assumed to consist of a bipolar or MOSFET (silic on) semiconductor device with device packaging consisting of first-lev el interconnects that may be wirebonds, flip-chip, or tape automated b onds, die attachment, substrate attachment, case, lid, lid seal and le ad seal. Failure mechanisms actuated under various temperature stresse s, including steady-state temperature, temperature cycling, temperatur e gradients, and time-dependent temperature change, have been identifi ed for each of the package elements. A methodology for derivation of t he functional relationship between temperature and microelectronic rel iability has been discussed.