Qx. Yu et al., EFFECT OF V III RATIO ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED ALGAINP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of crystal growth, 148(1-2), 1995, pp. 13-16
Electrical properties of Si-doped (Al0.5Ga0.5)(0.5)In0.5P grown by atm
ospheric-pressure metalorganic chemical vapor deposition (MOCVD) under
a wide range of growth conditions were investigated. The carrier conc
entrations of Si-doped ALGaInP increase with increasing mole fraction
of dopant and growth temperature with activation energy of 2.2 eV, res
pectively. The V/III ratio has a strong effect on the electrical and o
ptical properties in Si-doped AIGaInP. When the V/III ratio was varied
from 50 to 200, the electron concentration, n, of Si-doped AlGaInP de
creased with increasing V/III ratio and a sharp X-ray diffraction peak
(full width at half maximum of 60 are sec at a V/III ratio of 200) wa
s obtained. Also found was a decrease in the Al content of the alloy w
ith increased silane concentration for a constant group V/III ratio.