EFFECT OF V III RATIO ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED ALGAINP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Electrical properties of Si-doped (Al0.5Ga0.5)(0.5)In0.5P grown by atm ospheric-pressure metalorganic chemical vapor deposition (MOCVD) under a wide range of growth conditions were investigated. The carrier conc entrations of Si-doped ALGaInP increase with increasing mole fraction of dopant and growth temperature with activation energy of 2.2 eV, res pectively. The V/III ratio has a strong effect on the electrical and o ptical properties in Si-doped AIGaInP. When the V/III ratio was varied from 50 to 200, the electron concentration, n, of Si-doped AlGaInP de creased with increasing V/III ratio and a sharp X-ray diffraction peak (full width at half maximum of 60 are sec at a V/III ratio of 200) wa s obtained. Also found was a decrease in the Al content of the alloy w ith increased silane concentration for a constant group V/III ratio.