THE INFLUENCE OF SOLID-PHASE CONDUCTIVE RESISTANCE ON VAPOR GROWTH OFALPHA-HGI2 CRYSTALS

The influence of the conductive heat resistance on the vapor growth of alpha-HgI2 crystals is studied in the steady-state one-dimensional ap proximation. It is shown that the conductive heat resistance leads to an increase of the temperature at the growth interface only under kine tic control of growth rate. Under mass transfer control, the increase of conductive heat resistance is offset by the sharp decrease of (i) g rowth rate and, as a consequence, (ii) released sublimation heat. Thus , the temperature at the growth interface does not change noticeably a fter onset of mass transfer control. It is shown that the temperature correction technique is only effective under kinetic control.