The velocity dependence of the partition coefficient was measured for
rapid solidification of polycrystalline Si-4.5 at% As and Si-9 at% As
alloys induced by pulsed laser melting. The results constitute the fir
st test of partitioning models both for the high velocity regime and f
or non-dilute alloys. The continuous growth model (CGM) of Aziz and Ka
plan fits the data well, but with an unusually low diffusive speed of
0.46 m/s. The data show negligible dependence of partitioning on conce
ntration, also consistent with the CGM. The predictions of the Hillert
-Sundman model are inconsistent with partitioning results. Using the a
periodic stepwise growth model (ASGM) of Goldman and Aziz, an average
over crystallographic orientations with parameters from independent si
ngle-crystal experiments is shown to be reasonably consistent with the
se polycrystalline partitioning results. The results, combined with ot
hers, indicate that the CGM without solute drag and its extension to l
ateral ledge motion, the ASGM, are the only models that fit the data f
or both solute partioning and kinetic undercooling interface response
functions. No current solute drag models can match both partitioning a
nd undercooling measurements.