A VERSATILE HALF-MICRON COMPLEMENTARY BICMOS TECHNOLOGY FOR MICROPROCESSOR-BASED SMART POWER APPLICATIONS

A modular, high density 0.5 mu m Complementary BiCMOS technology with integrated high-voltage Lateral Diffused MOS (LDMOS) and conductivity modulated Lateral Insulated Gate Bipolar Transistor (LIGBT) structures designed for high performance, multi-functional integrated circuit ap plications is described. The advantages of VLSI processing and 0.5 mu m compatible layout rules have been applied to the design and fabricat ion of the tight-pitch high-voltage devices without sacrificing the pe rformance of 0.5 mu m dual-poly (N+/P+) gate CMOS and complementary ve rtical bipolar transistors. Single chip integration of VLSI microproce ssors with high-voltage and/or high-current input and output functions for ''Smart Power'' applications can be achieved using this technolog y.