IMPROVED CIRCUIT TECHNIQUE TO REDUCE H(FE) DEGRADATION IN BIPOLAR OUTPUT DRIVERS

Authors
KIZILYALLI IC MCANDREW CC
Citation
Ic. Kizilyalli et Cc. Mcandrew, IMPROVED CIRCUIT TECHNIQUE TO REDUCE H(FE) DEGRADATION IN BIPOLAR OUTPUT DRIVERS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 573-574
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
3
Year of publication
1995
Pages
573 - 574
Database
ISI
SICI code
0018-9383(1995)42:3<573:ICTTRH>2.0.ZU;2-7
Abstract
h(fe) degradation in bipolar transistors caused by reverse V-be Stress decreases the reliability of BiCMOS circuits, In this paper, we prese nt an improved circuit technique to limit reverse V-be, and thus signi ficantly increase BICMOS reliability. The technique also reduces the b ase-emitter breakdown voltage constraint on BICMOS technology design,