MISFIT STRAIN-INDUCED TWEED-TWIN TRANSFORMATION ON COMPOSITION MODULATION ZN1-XMGXSYSE1-Y LAYERS AND THE QUALITY-CONTROL OF THE ZNSE BUFFERGAAS INTERFACE
Lh. Kuo et al., MISFIT STRAIN-INDUCED TWEED-TWIN TRANSFORMATION ON COMPOSITION MODULATION ZN1-XMGXSYSE1-Y LAYERS AND THE QUALITY-CONTROL OF THE ZNSE BUFFERGAAS INTERFACE, Journal of electronic materials, 24(3), 1995, pp. 155-162
[100] composition modulation as well as [101] and [$($) over bar$$ 101
] tweed strain contrast were observed in 0.72 mu m thick Zn1-xMgxSySe1
-y epitaxial films grown on ZnSe buffer layers. The lattice distortion
induced tweed strain contrast disappears in relaxed Zn1-xMgxSySe1-y l
ayers of thicknesses above similar to 0.8-1 mu m even though the [100]
composition modulation remains. Instead, the formation of microtwins
takes place to relieve the strain in the distorted lattice of the quat
ernary films. layers were obtained by growing a ZnSe buffer layer on A
sstabilized GaAs substrates with Zn treatment of the substrate prior t
o the growth of the film. The samples with film thickness of similar t
o 0.72 mu m were of very high quality with a defect density of less th
an 5 x 10(4)/cm(2). Some samples showed rough ZnSe/GaAs interfaces and
a high density of Frank partial dislocations originating at the ZnSe/
GaAs interface. The interface roughness is believed to result from an
As-rich GaAs surface after the oxide desorption.