IN-SITU P-DOPED SI AND SI1-XGEX EPITAXIAL-FILMS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Remote plasma-enhanced chemical vapor deposition has been applied to g row in-situ doped n-type epitaxial Si and Si1-xGex with the introducti on of phosphine. Growth rates and dopant incorporation have been studi ed as a function of process parameters (temperature, rf power, and dop ant gas flow). Growth rates remain unaltered with the introduction of PH3 during deposition, unlike in many other low temperature growth tec hniques. Phosphorus incorporation shows a linear dependence on PH3 flo w rate, but has little if any dependence on the other growth parameter s, such as radio frequency power and substrate temperature, for the ra nges of parameters that were examined. Phosphorus concentrations as hi gh as 4 x 10(19) cm(-3) at 14 W have been obtained.