UNIFORM SELECTIVE-AREA GROWTH OF GAAS AND GAINP BY LOW-TEMPERATURE CHEMICAL BEAM EPITAXY

Selective area chemical beam epitaxy (CBE) has been investigated for G aAs and GaInP materials. Three topics are considered in this work: the critical temperature for selective growth, the compositional variatio n of GaInP on patterned surfaces and the topology of the localized epi taxy. The major results of this study are: (i) the decrease of the gro wth rate appears to lower drastically the critical selective growth te mperature so that GaAs and GaInP can be selectively grown under the op timized temperature conditions defined for CBE, (ii) the composition o f the GaInP alloy, analysed by 300 K photoluminescence, is found to be uniform in the selectively grown stripes compared to the unpatterned substrate, (iii) growth conditions have been established to selectivel y grow GaAs stripes limited by vertical sidewalls.