ROOM-TEMPERATURE SYNTHESIS OF CUBIC BORON-NITRIDE FILMS BY PULSE HIGH-ENERGY DENSITY PLASMA

Cubic boron nitride films have been prepared on the Si(100) oriented s ubstrate at room temperature by a pulse high energy density plasma (PH EDP). The pulse plasma is generated in a coaxial plasma gun. The worki ng gas was a mixture of 50%B2H6 + 50%N-2. The structure of boron nitri de films strongly depends on the voltages between inner and outer elec trodes. The boron nitride films were characterized by scanning electro n microscopy, electron diffraction and infrared absorption spectroscop y.