ROOM-TEMPERATURE UNPASSIVATED INAS P-I-N PHOTODETECTORS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
LIN RM TANG SF LEE SC KUAN CH CHEN GS SUN TP WU JC
Citation
Rm. Lin et al., ROOM-TEMPERATURE UNPASSIVATED INAS P-I-N PHOTODETECTORS GROWN BY MOLECULAR-BEAM EPITAXY, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 209-213
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
2
Year of publication
1997
Pages
209 - 213
Database
ISI
SICI code
0018-9383(1997)44:2<209:RUIPPG>2.0.ZU;2-K
Abstract
An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated, The zero-bias resistance area prod ucts of the diode with 720-nm thick i-layer are 8.1 Omega-cm(2) at roo m temperature and as high as 1.3 M Omega-cm(2) at 77 K, At 77 K, the d iode exhibits a breakdown voltage exceeding 13 V, When tested under a 500 K blackbody source, the measured detectivity limited by Johnson no ise is 1.2 x 10(10) cm-Hz(1/2)/W at room temperature and 8.1 x 10(11) cm-Hz(1/2)/W at 77 K, To our knowledge, this is the best data for a ro om temperature infrared detector.