M. Fujinaga et N. Kotani, 3-D TOPOGRAPHY SIMULATOR (3-D MULSS) BASED ON A PHYSICAL DESCRIPTION OF MATERIAL TOPOGRAPHY, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 226-238
This paper presents a three-dimensional (3-D) topography simulator (3-
D MULSS), and its applications. We focus on the description of the mat
erial surface and the algorithm of the surface advancement. Then we pr
opose a 3-D topography simulation algorithm, with consideration to the
probe size of observation, and based on the integration formula of th
e balance equation. Next, we show the simulation results of the 3-D MU
LSS: 1) isotropic deposition; 2) Aluminum-sputter deposition; 3) isotr
opic etching; 4) anisotropic etching; and 5) sequential process steps.
These results make the accuracy of the 3-D MULSS clear, and also show
that it is possible to stably simulate the sequential process steps.