3-D TOPOGRAPHY SIMULATOR (3-D MULSS) BASED ON A PHYSICAL DESCRIPTION OF MATERIAL TOPOGRAPHY

Citation
M. Fujinaga et N. Kotani, 3-D TOPOGRAPHY SIMULATOR (3-D MULSS) BASED ON A PHYSICAL DESCRIPTION OF MATERIAL TOPOGRAPHY, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 226-238
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
44
Issue
2
Year of publication
1997
Pages
226 - 238
Database
ISI
SICI code
0018-9383(1997)44:2<226:3TS(MB>2.0.ZU;2-J
Abstract
This paper presents a three-dimensional (3-D) topography simulator (3- D MULSS), and its applications. We focus on the description of the mat erial surface and the algorithm of the surface advancement. Then we pr opose a 3-D topography simulation algorithm, with consideration to the probe size of observation, and based on the integration formula of th e balance equation. Next, we show the simulation results of the 3-D MU LSS: 1) isotropic deposition; 2) Aluminum-sputter deposition; 3) isotr opic etching; 4) anisotropic etching; and 5) sequential process steps. These results make the accuracy of the 3-D MULSS clear, and also show that it is possible to stably simulate the sequential process steps.