SUPPRESSION OF TWIN FORMATION IN CDTE(111)B EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SI(001)

CdTe(111)B layers have been grown on misoriented Si(001). Twin formati on inside CdTe(111)B layer is very sensitive to the substrate tilt dir ection. When Si(001) is tilted toward [110] or [100], a fully twinned layer is obtained. When Si(001) is tilted toward a direction significa ntly away from [110], a twin-free layer is obtained. Microtwins inside the CdTe(111)B layers are overwhelmingly dominated by the lamellar tw ins. CdTe(111)B layers always start with heavily lamellar twinning. Fo r twin-free layers, the lamellar twins are gradually suppressed and gi ve way to twin-free CdTe(111)B layer. The major driving forces for sup pressing the lamellar twinning are the preferential orientation of CdT e[11 ($) over bar 2] along Si[1 ($) over bar 10] and lattice relaxatio n. Such preferential orientation is found to exist for the CdTe(111)B layers grown on Si(001) tilted toward a direction between [110] and [1 00].