Dislocations crossing a junction in HgCdTe have little effect on detec
tor responsivity, but are known to reduce the zero bias impedance R(0)
A and increase the leakage current, especially at low temperatures whe
re R(0)A is dominated by tunneling and generation/recombination proces
ses. We have calculated the Coulomb and piezoelectric fields associate
d with dislocations in an attempt to interpret their effect on the jun
ction's transport properties. Dislocation electric fields can affect t
ransport since they are superimposed on the built-in and applied junct
ion fields which control the currents. The screening of the fields in
the neutral region is consistent with the dislocations' small effect o
n responsivity. Their impact in the space charge region is found to be
significant and consistent with the nonlinear dependence of performan
ce on dislocation density. The piezoelectric potential of the typical
60 degrees dislocation in a sphalerite crystal, and the Coulomb potent
ial of a dislocation crossing the junction plane other than normally,
are angularly varying in the junction plane. Angular variation of the
potentials can be qualitatively interpreted as an angular modulation o
f the potential barrier. Because of the nonlinear dependence of juncti
on currents on the barrier (or the junction potential), the angular va
riation of the currents does not vanish upon averaging. We find that t
he range of the Coulomb potential is too small to account for a major
portion of the experimentally reported performance degradation but may
be responsible for the reduction of R(0)A at cryogenic temperatures a
nd low dislocation density, and that the longer range piezoelectric po
tential may be important. We also find that superposing the potentials
of neighboring dislocations, because of the nonlinear dependence of j
unction leakage currents on junction potentials may account for the ob
served nonlinearity of performance degradation with dislocation densit
y as measured by etch pit density.