BAND-STRUCTURE, MAGNETOTRANSPORT, AND MAGNETOOPTICAL PROPERTIES OF INAS-GA1-XINXSB SUPERLATTICES

We have theoretically and experimentally investigated the electronic p roperties of InAs-Ga1-xInxSb superlattices. It is found that a strong repulsion between the El and HI bands in superlattices with thin Ga1-x InxSb layers leads to dispersion relations that closely resemble those in HgTe-CdTe superlattices. Temperature-dependent magneto-transport a nd magneto-optical measurements on samples with a range of InAs layer thicknesses confirm several of the theoretically predicted consequence s, e.g., the coexistence of two electron species in semimetallic super lattices and a very light electron cyctron mass in narrow-gap semicond ucting samples. The electron mobility is found to be dominated by inte rface roughness scattering under nearly all conditions of interest. Im plications for this system as an infrared detector material are discus sed.