EXPERIMENTAL AND THEORETICAL CHARACTERISTICS OF HIGH-PERFORMANCE PSEUDOMORPHIC DOUBLE-HETEROJUNCTION INALAS IN0.7GA0.3AS/INALAS HEMTS/

Citation
Y. Kwon et al., EXPERIMENTAL AND THEORETICAL CHARACTERISTICS OF HIGH-PERFORMANCE PSEUDOMORPHIC DOUBLE-HETEROJUNCTION INALAS IN0.7GA0.3AS/INALAS HEMTS/, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1017-1025
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
42
Issue
6
Year of publication
1995
Pages
1017 - 1025
Database
ISI
SICI code
0018-9383(1995)42:6<1017:EATCOH>2.0.ZU;2-7
Abstract
Pseudomorphic double heterojunction (DH) InAlAs/In0.7Ga0.3As/InAlAs HE MT's with very high cut-off frequencies and current densities have bee n demonstrated, DC and microwave characteristics of the double heteroj unction acid single heterojunction (SIF) HEMT's have been compared, Tw o identical layers except for the dopings have been grown and fabricat ed using a conventional non-self-aligned process for this purpose, In order to further enhance the performance level of DH-HEMT's, a sub-0.1 mu m offset Gamma-gate self-aligned process has been used on DH layer s, A maximum frequency of oscillation (f(max)) of 350 GHz and a curren t gain cut-off frequency (f(T)) of 180 GHz have been achieved in this way along with the full channel current of 1.2 A/mm, Theoretical simul ation using 2-D ensemble Monte Carlo simulation has also been performe d to optimize the DH layer structure and to study the transport charac teristics of DH-HEMT's compared with SH counterparts.