2DEG BASE HOT-ELECTRON TRANSISTORS FABRICATED USING MBE AND IN-SITU ION-BEAM LITHOGRAPHY

Authors
INGRAM SG LINFIELD EH BROWN KM JONES GAC RITCHIE DA KELLY MJ
Citation
Sg. Ingram et al., 2DEG BASE HOT-ELECTRON TRANSISTORS FABRICATED USING MBE AND IN-SITU ION-BEAM LITHOGRAPHY, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1065-1069
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
6
Year of publication
1995
Pages
1065 - 1069
Database
ISI
SICI code
0018-9383(1995)42:6<1065:2BHTFU>2.0.ZU;2-8
Abstract
A vertical hot electron transistor incorporating a two-dimensional ele ctron gas (2DEG) base has been fabricated in the GaAs/AlGaAs materials system, The difficulties caused by the need to form selective ohmic c ontacts to the different conducting layers have been overcome using a combination of in situ focused ion beam (FIB) isolation and molecular beam epitaxial (MBE) regrowth, This has allowed a high yield of workin g devices to be achieved with a typical common emitter current gain of H-FE = 6 at low temperatures.