DC AND LARGE-SIGNAL TIME-DEPENDENT ELECTRON-TRANSPORT IN HETEROSTRUCTURE DEVICES - AN INVESTIGATION OF THE HETEROSTRUCTURE BARRIER VARACTOR

The de and large-signal time-dependent electron transport properties o f Heterostructure Barrier Varactors () are investigated using a physic al model which combines drift-diffusion current transport through the heterostructure bulk with thermionic and thermionic-field emission cur rents imposed at the abrupt heterointerfaces in a fully self-consisten t manner. A fast and accurate hydrodynamic device simulator for generi c unipolar InGaAs/InAlAs on InP, InGaAs/InP on InP, and GaAs/InGaAs/Al GaAs on GaAs has been developed based on this model, The experimentall y observed current-voltage and capacitance-voltage characteristics of GaAs/AlGaAs and GaAs/InGaAs/AlGaAs are compared with the simulated res ults over a wide range of de bias, Large-signal time-dependent simulat ions at a pump frequency of 100 GHz confirm the odd-harmonic operation of these devices and indicate that multiple barrier should provide ef ficient frequency multiplication, especially in high order frequency m ultipliers, broadband frequency triplers, and quasi-optical tripler ar rays.