SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS

In this paper, an analytic current-voltage model in the subthreshold r egime for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the dependence o f the effective depleted charge on the drain bias and the voltage drop in the substrate region underneath the buried oxide. In addition to p redicting accurate subthreshold current-voltage characteristics and su bthreshold slope, this model can be used to predict important Short Ch annel Effects (SCE) such as the threshold voltage roll-off and Drain-I nduced Barrier Lowering (DIBL), This model is verified by comparison t o a two-dimensional device simulator, MEDICI. Good agreement is obtain ed for SOI channel lengths down to 0.25 mu m.