MODELING OF CRSI2-SI AND MOSI2-SI SCHOTTKY-BARRIER CONTACTS

Authors
DONOVAL D SNOWDEN CM NAGL V RACKO J BARUS M
Citation
D. Donoval et al., MODELING OF CRSI2-SI AND MOSI2-SI SCHOTTKY-BARRIER CONTACTS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1187-1189
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
6
Year of publication
1995
Pages
1187 - 1189
Database
ISI
SICI code
0018-9383(1995)42:6<1187:MOCAMS>2.0.ZU;2-1
Abstract
Forward and reverse I-V characteristics measured on CrSi2-Si and MoSi2 -Si Schottky structures were compared with simulated ones, While the C rSi2-Si shows the typical non-ideal I-V characteristics of a reverse b iased Schottky contact, the MoSi2-Si exhibit the nearly ideal forward and reverse I-V characteristics, The used model for numerical simulati on involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation-recombinatio n theory and has the closed form.