NONDESTRUCTIVE, ROOM-TEMPERATURE ANALYSIS QUALIFICATION OF WAFER-SIZED SEMICONDUCTOR-DEVICE STRUCTURES USING CONTACTLESS ELECTROMODULATION SPECTROSCOPY

Citation
Fh. Pollak et al., NONDESTRUCTIVE, ROOM-TEMPERATURE ANALYSIS QUALIFICATION OF WAFER-SIZED SEMICONDUCTOR-DEVICE STRUCTURES USING CONTACTLESS ELECTROMODULATION SPECTROSCOPY, Solid-state electronics, 38(6), 1995, pp. 1121-1129
Citations number
33
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
6
Year of publication
1995
Pages
1121 - 1129
Database
ISI
SICI code
0038-1101(1995)38:6<1121:NRAQOW>2.0.ZU;2-Y
Abstract
This paper reviews the use of the contactless, and hence nondestructiv e, electromodulation methods of photoreflectance and contactless elect roreflectance for the room temperature characterization and qualificat ion of semiconductor device structures. These include heterojunction b ipolar transistors, pseudomorphic high electron mobility transistors, quantum well lasers, vertical cavity surface emitting lasers, multiple quantum well infrared detectors and solar cells.