EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP

Authors
POLYAKOV AY CHELNIY AA GOVORKOV AV SMIRNOV NB MILNES AG PEARTON SJ WILSON RG BALMASHNOV AA ALUEV AN MARKOV AV
Citation
Ay. Polyakov et al., EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP, Solid-state electronics, 38(6), 1995, pp. 1131-1135
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
6
Year of publication
1995
Pages
1131 - 1135
Database
ISI
SICI code
0038-1101(1995)38:6<1131:EOPIAH>2.0.ZU;2-6
Abstract
It is shown that both accepters and donors can be passivated by hydrog en in InGaP and InGaAlP and that high-resistivity (about 10(3) Ohm cm) layers of p-InGaAlP and of p-InGaP can be prepared by hydrogen plasma treatment at 250 degrees C. Proton implantation with energy 100 keV i s shown to create high-resistivity layers (10(4)-10(5) Ohm cm) both in n- and in p-type InGaP and InGaAlP.