A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS

Authors
MCLARTY PK CRISTOLOVEANU S FAYNOT O MISRA V HAUSER JR WORTMAN JJ
Citation
Pk. Mclarty et al., A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS, Solid-state electronics, 38(6), 1995, pp. 1175-1177
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
6
Year of publication
1995
Pages
1175 - 1177
Database
ISI
SICI code
0038-1101(1995)38:6<1175:ASPEMF>2.0.ZU;2-P
Abstract
A simple parameter extraction technique is presented for ultra-thin ox ide MOSFETs. The technique is based on a suitable MOSFET mobility mode l and extracts threshold voltage (V-t), mobility (mu(0)), and two mobi lity degradation parameters theta(1) and theta(2). It has been found t hat the extracted parameters accurately describe the measured current voltage characteristics for strong inversion.