ACCURATE PARAMETER EXTRACTION OF HETEROJUNCTIONS BASED ON INVERSE C-VSIMULATION

A general determination procedure of physical parameters of heterojunc tions is proposed based on the inverse C-V simulation. This simulation is based on the classical drift-diffusion simulation and parameter fi tting. It is shown that using the inverse C-V simulation enables us to determine such parameters as the band offsets, the position of hetero junction, and doping profiles without introducing any ambiguous physic al parameters such as the interface charge, As a test sample, the VPE grown InGaAs/InP APD is used.