EFFECT OF SURFACE RECOMBINATION ON THE TRANSIT-TIME IN HEAVILY-DOPED N(-P JUNCTION SILICON SOLAR-CELL())

Authors
DE SS GHOSH AK SIL D SINHA PK BERA M
Citation
Ss. De et al., EFFECT OF SURFACE RECOMBINATION ON THE TRANSIT-TIME IN HEAVILY-DOPED N(-P JUNCTION SILICON SOLAR-CELL()), Solid-state electronics, 38(6), 1995, pp. 1270-1272
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
6
Year of publication
1995
Pages
1270 - 1272
Database
ISI
SICI code
0038-1101(1995)38:6<1270:EOSROT>2.0.ZU;2-P