HREM OBSERVATIONS OF ION BOMBARDMENT-INDUCED DISLOCATION LOOPS IN ZNO

Authors
COUDERC JJ DEMAI JJ VANDERSCHAEVE G PEIGNEY A
Citation
Jj. Couderc et al., HREM OBSERVATIONS OF ION BOMBARDMENT-INDUCED DISLOCATION LOOPS IN ZNO, Microscopy microanalysis microstructures, 6(2), 1995, pp. 229-235
Citations number
18
Categorie Soggetti
Spectroscopy,Microscopy
Journal title
Microscopy microanalysis microstructures → ACNP
ISSN journal
11542799
Volume
6
Issue
2
Year of publication
1995
Pages
229 - 235
Database
ISI
SICI code
1154-2799(1995)6:2<229:HOOIBD>2.0.ZU;2-W
Abstract
High resolution electron microscopy (HREM) is used to show faulted dis location loops resulting from ion bombardment thinning in ZnO. The sta cking faults are created by the insertion of a Zn-O double layer in th e basal plane and are of the 1 Delta type (complex stacking fault).