UNINTENTIONAL ZINC DIFFUSION IN INP PN-HOMOJUNCTIONS

Authors
REYNOLDS CL SWAMINATHAN V GEVA M SMITH LE LUTHER LC
Citation
Cl. Reynolds et al., UNINTENTIONAL ZINC DIFFUSION IN INP PN-HOMOJUNCTIONS, Journal of electronic materials, 24(6), 1995, pp. 747-750
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
6
Year of publication
1995
Pages
747 - 750
Database
ISI
SICI code
0361-5235(1995)24:6<747:UZDIIP>2.0.ZU;2-Y
Abstract
Unintentional zinc diffusion into uniformly Si-doped InP layers has be en studied. The sharp non-error function Zn concentration profiles and inflections are shown to be consistent with the substitutional-inters titial mechanism when the influence of the electrostatic field of the pn-junction on diffusion is taken into consideration.