REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A

Authors
SATO K FAHY MR KAMIYA I NEAVE JH JOYCE BA
Citation
K. Sato et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 77-80
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
1
Pages
77 - 80
Database
ISI
SICI code
0022-0248(1995)150:1-4<77:RHEIOD>2.0.ZU;2-G
Abstract
We have made a reflection high-energy diffraction (RHEED) intensity os cillation study of the growth of (Al,Ga)As on GaAs and (Al,Ga)As (111) A surfaces. The RHEED intensity oscillations during growth of (Al,Ga)A s are dependent on both growth temperature and As-4:Ga flux ratio. In addition, the oscillation period decreases as the Al fraction in the ( Al,Ga)As is increased. Changes in the oscillation period during growth of the first few monolayers of both GaAs on (Al,Ga)As and (Al,Ga)As o n GaAs may indicate the intermixing of Al and Ga near the heterointerf ace.