90-DEGREES DOUBLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXPERIMENTS ON VICINAL SURFACES OF GAAS

Citation
H. Norenberg et al., 90-DEGREES DOUBLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXPERIMENTS ON VICINAL SURFACES OF GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 81-84
Citations number
9
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
1
Pages
81 - 84
Database
ISI
SICI code
0022-0248(1995)150:1-4<81:9DRHEE>2.0.ZU;2-9
Abstract
Reflection high-energy electron diffraction (RHEED) experiments record ing the intensity of the specular beam in two azimuths have been carri ed out simultaneously. The critical temperature for the transition fro m 2D nucleation to step-flow growth was simultaneously estimated in th e [($) over bar 110] and [110] directions by observing the disappearan ce of RHEED intensity oscillations on GaAs(001) substrates 2 degrees m isoriented towards GaAs(111)A. It was found that the oscillations disa ppear at a lower substrate temperature in the [110] azimuth. The diffe rence in the transition temperatures was 25 degrees C.