H. Norenberg et al., 90-DEGREES DOUBLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXPERIMENTS ON VICINAL SURFACES OF GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 81-84
Reflection high-energy electron diffraction (RHEED) experiments record
ing the intensity of the specular beam in two azimuths have been carri
ed out simultaneously. The critical temperature for the transition fro
m 2D nucleation to step-flow growth was simultaneously estimated in th
e [($) over bar 110] and [110] directions by observing the disappearan
ce of RHEED intensity oscillations on GaAs(001) substrates 2 degrees m
isoriented towards GaAs(111)A. It was found that the oscillations disa
ppear at a lower substrate temperature in the [110] azimuth. The diffe
rence in the transition temperatures was 25 degrees C.