MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS GAAS STRAINED-LAYER RELAXATION PROCESSES/

Molecular dynamics simulations on In1-xGaxAs/GaAs(100) systems are per formed showing the dynamics of threading dislocations in the overlayer s and the formation of misfit dislocations at the heterojunction inter face. The developed code, using a modified Tersoff potential, simulate s the threading dislocation dynamics in the InGaAs overlayer, and also the formation of interface misfit dislocations. Values for critical t hicknesses are predicted and the atomic structure of the dislocation c ores are determined.