THE INJECTED CARBON IMPURITIES IN INTERMIXED GAAS ALAS MULTIPLE-QUANTUM WELLS DURING THERMAL-TREATMENT/

Photoluminescence (PL) measurements were performed in order to investi gate the carbon impurity effects on the intermixing behavior of GaAs/A lAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The GaAs/AlAs MQWs were annealed with a carbon source in a furnace anneal ing system. The PL spectra show that the magnitude of the intermixing of Al and Ga induced by thermal annealing in GaAs/AlAs MQWs increases with depth. The nonuniformity of the intermixing as a function of the depth originated from the carbon impurities which were injected during thermal treatment.