QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
MCELHINNEY M SKURAS E HOLMES SN JOHNSON EA LONG AR STANLEY CR
Citation
M. Mcelhinney et al., QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 266-270
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
1
Pages
266 - 270
Database
ISI
SICI code
0022-0248(1995)150:1-4<266:QTMOSD>2.0.ZU;2-X
Abstract
A series of high quality delta-doped In-0.53,Ga0.47As samples have bee n grown lattice matched to InP with design doping densities in the ran ge 2 x 10(12) to 5 x 10(12) cm(-2). Analysis of the individual sub-ban d densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.