CHARACTERIZATION OF GAAS ALAS INTERFACIAL ATOMIC STEP STRUCTURES ON A(411)A-ORIENTED SUBSTRATE BY TRANSMISSION ELECTRON-MICROSCOPE/

Authors
TSUDA Y SHIMOMURA S HIYAMIZU S SANO N
Citation
Y. Tsuda et al., CHARACTERIZATION OF GAAS ALAS INTERFACIAL ATOMIC STEP STRUCTURES ON A(411)A-ORIENTED SUBSTRATE BY TRANSMISSION ELECTRON-MICROSCOPE/, Journal of crystal growth, 150(1-4), 1995, pp. 415-420
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
1
Pages
415 - 420
Database
ISI
SICI code
0022-0248(1995)150:1-4<415:COGAIA>2.0.ZU;2-W
Abstract
We observed atomic structures of (411)A GaAs/AlAs hetero-interfaces us ing a transmission electron microscope, and studied the numerical comp uter simulations of the lattice images for the first time. The observe d specimens were GaAs/AlAs multi-layer structures fabricated by molecu lar beam epitaxy, where the AlAs layers were very thin (0.75-2.1 monol ayer). From the hetero-interfacial structures observed in cross-sectio nal view, it was found that the (411)A atomic step structures were bas ed on Shimomura's model, which has already been proposed in a previous paper. We will discuss the concrete interfacial structure.