SILICON COMPENSATION AND SCATTERING MECHANISMS IN 2-DIMENSIONAL ELECTRON GASES ON (110)GAAS

Authors
HOLLAND MC KEAN AH STANLEY CR
Citation
Mc. Holland et al., SILICON COMPENSATION AND SCATTERING MECHANISMS IN 2-DIMENSIONAL ELECTRON GASES ON (110)GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 455-459
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
1
Pages
455 - 459
Database
ISI
SICI code
0022-0248(1995)150:1-4<455:SCASMI>2.0.ZU;2-1
Abstract
A study of the MBE growth of (001) and (110) (Al,Ga)As is reported, an d the efficiency of Si as an n-type dopant in (11O)GaAs is accessed. A 40 nm spacer two-dimensional electron gas (2DEG) structure grown on ( 11O)GaAs gives a mobility of 540,000 cm(2) V-1 s(-1) at 4 K after illu mination. The dominant scattering mechanisms in 2DEGs on (110) and (00 1)GaAs grown under the separate optimum growth conditions for the two orientations are compared.