PREFERENTIAL MIGRATION OF INDIUM ATOMS ON THE (411)A PLANE IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Lateral profiles of In content in a 1.5 mu m thick InxGa1-xAs (x simil ar or equal to 0.2) layer grown on GaAs channeled substrates (CSs) wit h (411)A side-slopes by molecular beam epitaxy (MBE) have been investi gated with the use of energy dispersive X-ray spectroscopy (EDX). The observed profiles of the In content suggested that In atoms migrate pr eferentially in the [1 ($) over bar 2 ($) over bar 2] direction on the (411)A plane during MBE growth. This preferential migration of In ato ms along [1 ($) over bar 2 ($) over bar 2] on the (411)A plane was con firmed by comparing observed lateral profiles of In content in InGaAs layers grown on GaAs CSs and simulated In profiles which are calculate d by taking into account of an additional one-way flow of In atoms alo ng [1 ($) over bar 2 ($) over bar 2].