MOLECULAR-BEAM EPITAXIAL-GROWTH AND THERMODYNAMIC ANALYSIS OF INGAAS AND INALAS LATTICE-MATCHED TO INP

Reflection high-energy electron diffraction (RHEED) intensity oscillat ions have been used to detect the onset of metal droplet formation on the surface of InAs, InGaAs and InAlAs during molecular beam epitaxy. The growth conditions which produce such droplets are shown to be in g ood agreement with predictions based on thermodynamic arguments.